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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) *High DC Current Gain : hFE= 1500(Min) @IC= 3A *Low Saturation Voltage APPLICATIONS *Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 100 UNIT V Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak w w scs .i w 100 7 5 8 0.5 1 30 150 -55~150 V V .cn mi e A A A A IBM PC TJ Tstg Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 4.17 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 3A; IB= 3mA B 2SD1022 MIN TYP. MAX 1.5 2.0 0.1 0.1 5 UNIT V V mA mA mA IC= 3A; IB= 3mA B VCB= 100V; IE=0 VCE= 100V; IB=0 VEB= 7V; IC=0 IC= 3A; VCE= 3V Switching times ton tstg tf Turn-on Time Storage Time Fall Time ww w sem isc . IC= 0.5A; VCE= 10V IC= 5A, IB1= -IB2= 5mA RL= 5; VBB2= 4V .cn i 1500 30000 20 MHz 2.0 5.0 3.0 s s s isc Websitewww.iscsemi.cn 2 |
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